|
|
MOSFETs N-Channel 40 V StripFET II Pwr Mos
- STP150NF04
- STMicroelectronics
-
1:
€ 2,14
-
870Auf Lager
|
Mouser-Teilenr.
511-STP150NF04
|
STMicroelectronics
|
MOSFETs N-Channel 40 V StripFET II Pwr Mos
|
|
870Auf Lager
|
|
|
€ 2,14
|
|
|
€ 1,45
|
|
|
€ 1,25
|
|
|
€ 1,05
|
|
|
€ 1,02
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
€ 8,22
-
37Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT040TO65G3
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37Auf Lager
|
|
|
€ 8,22
|
|
|
€ 6,21
|
|
|
€ 4,61
|
|
|
€ 4,30
|
|
|
€ 4,30
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
€ 2,07
-
1 003Auf Lager
-
1 000Auf Bestellung
-
Neues Produkt
|
Mouser-Teilenr.
511-STF80N1K1K6
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1 003Auf Lager
1 000Auf Bestellung
|
|
|
€ 2,07
|
|
|
€ 1,01
|
|
|
€ 0,903
|
|
|
€ 0,726
|
|
|
€ 0,666
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
€ 2,76
-
1 043Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STF80N600K6
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1 043Auf Lager
|
|
|
€ 2,76
|
|
|
€ 1,38
|
|
|
€ 1,36
|
|
|
€ 1,14
|
|
|
€ 0,998
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
€ 3,81
-
540Auf Lager
-
600Auf Bestellung
-
Neues Produkt
|
Mouser-Teilenr.
511-STGHU30M65DF2AG
Neues Produkt
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540Auf Lager
600Auf Bestellung
|
|
|
€ 3,81
|
|
|
€ 2,53
|
|
|
€ 1,79
|
|
|
€ 1,54
|
|
Min.: 1
Mult.: 1
:
600
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
€ 3,60
-
766Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STGWA30M65DF2AG
Neues Produkt
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766Auf Lager
|
|
|
€ 3,60
|
|
|
€ 2,43
|
|
|
€ 1,80
|
|
|
€ 1,60
|
|
|
€ 1,42
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
€ 4,15
-
496Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STK615N4F8AG
Neues Produkt
|
STMicroelectronics
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496Auf Lager
|
|
|
€ 4,15
|
|
|
€ 2,76
|
|
|
€ 1,96
|
|
|
€ 1,85
|
|
|
€ 1,75
|
|
|
€ 1,72
|
|
Min.: 1
Mult.: 1
:
2 000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
€ 1,81
-
910Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STL160N6LF7
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910Auf Lager
|
|
|
€ 1,81
|
|
|
€ 1,15
|
|
|
€ 0,781
|
|
|
€ 0,621
|
|
|
€ 0,579
|
|
|
€ 0,55
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
MOSFETs
|
|
|
|
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
€ 79,62
-
144Auf Lager
|
Mouser-Teilenr.
511-2N2222AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144Auf Lager
|
|
|
€ 79,62
|
|
|
€ 74,78
|
|
|
€ 67,42
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
€ 96,01
-
21Auf Lager
|
Mouser-Teilenr.
511-2N2907AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
€ 201,44
-
27Auf Lager
|
Mouser-Teilenr.
511-2N5154S1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
€ 5,73
-
557Auf Lager
|
Mouser-Teilenr.
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
557Auf Lager
|
|
|
€ 5,73
|
|
|
€ 2,85
|
|
|
€ 2,84
|
|
|
€ 2,82
|
|
|
€ 2,70
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
€ 17,67
-
137Auf Lager
|
Mouser-Teilenr.
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
137Auf Lager
|
|
|
€ 17,67
|
|
|
€ 12,69
|
|
|
€ 12,33
|
|
|
€ 11,52
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
€ 13,31
-
169Auf Lager
|
Mouser-Teilenr.
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169Auf Lager
|
|
|
€ 13,31
|
|
|
€ 9,40
|
|
|
€ 9,05
|
|
|
€ 8,57
|
|
|
€ 8,00
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
€ 13,43
-
532Auf Lager
|
Mouser-Teilenr.
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532Auf Lager
|
|
|
€ 13,43
|
|
|
€ 9,49
|
|
|
€ 8,08
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
€ 16,25
-
478Auf Lager
|
Mouser-Teilenr.
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
478Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
€ 16,62
-
590Auf Lager
|
Mouser-Teilenr.
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
590Auf Lager
|
|
|
€ 16,62
|
|
|
€ 11,11
|
|
|
€ 10,23
|
|
|
€ 9,57
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
€ 15,54
-
462Auf Lager
|
Mouser-Teilenr.
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
462Auf Lager
|
|
|
€ 15,54
|
|
|
€ 11,37
|
|
|
€ 9,98
|
|
|
€ 9,51
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
€ 14,00
-
338Auf Lager
|
Mouser-Teilenr.
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
€ 11,31
-
598Auf Lager
|
Mouser-Teilenr.
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
598Auf Lager
|
|
|
€ 11,31
|
|
|
€ 7,90
|
|
|
€ 6,47
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
€ 11,22
-
587Auf Lager
|
Mouser-Teilenr.
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
587Auf Lager
|
|
|
€ 11,22
|
|
|
€ 7,84
|
|
|
€ 6,41
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
€ 9,10
-
537Auf Lager
-
600Auf Bestellung
|
Mouser-Teilenr.
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537Auf Lager
600Auf Bestellung
|
|
|
€ 9,10
|
|
|
€ 5,57
|
|
|
€ 5,30
|
|
|
€ 5,05
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
€ 10,78
-
638Auf Lager
|
Mouser-Teilenr.
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
638Auf Lager
|
|
|
€ 10,78
|
|
|
€ 7,87
|
|
|
€ 6,39
|
|
|
€ 6,38
|
|
|
€ 6,08
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
€ 10,87
-
303Auf Lager
|
Mouser-Teilenr.
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
303Auf Lager
|
|
|
€ 10,87
|
|
|
€ 8,95
|
|
|
€ 6,87
|
|
|
€ 6,14
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
€ 21,59
-
187Auf Lager
-
200Auf Bestellung
|
Mouser-Teilenr.
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
187Auf Lager
200Auf Bestellung
|
|
|
€ 21,59
|
|
|
€ 16,59
|
|
|
€ 10,84
|
|
|
€ 10,84
|
|
|
€ 10,32
|
|
Min.: 1
Mult.: 1
:
200
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|