STMicroelectronics MOSFETs

Ergebnisse: 1 319
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Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Qualifikation
Handelsname
Verpackung
STMicroelectronics MOSFETs N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
Datenblatt
1Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 630 mOhms - 30 V, 30 V 3 V 15 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package
Datenblatt
89Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 12 A 445 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package
Datenblatt
393Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 2 A 2.75 Ohms - 30 V, 30 V 3 V 2.63 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-CH 800V 2.8Ohm typ 2.5A Zener-protecte
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176Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 2.5 A 2.8 Ohms - 30 V, 30 V 4 V 9.5 nC - 55 C + 150 C 60 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-CH 950V 2Ohm typ 3.5A Zener-protected
Datenblatt
451Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 3.5 A 2 Ohms - 30 V, 30 V 4 V 12.5 nC - 55 C + 150 C 70 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch, 650V-1.2ohms Zener SuperMESH 5A
Datenblatt
1 000Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 5 A 1.6 Ohms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 25 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220 package
Datenblatt
467Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 5 A 1.15 Ohms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N Ch 40V 5.4mOhm 80A
Datenblatt
643Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 80 A 6.2 mOhms - 20 V, 20 V 2 V 54 nC - 55 C + 175 C 110 W Enhancement AEC-Q100 STripFET Tube
STMicroelectronics MOSFETs N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
Datenblatt
Produkt-Kommentare
903Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5 A 900 mOhms - 25 V, 25 V 3 V 10 nC - 55 C + 150 C 60 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch, 650V-1ohm Zener SuperMESH 6.4A
Datenblatt
27Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6.4 A 1.2 Ohms - 30 V, 30 V 3.75 V 41 nC - 55 C + 150 C 30 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package
Datenblatt
Produkt-Kommentare
130Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 2 A 4.5 Ohms - 30 V, 30 V 4 V 9.5 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 525V 2.1 Ohm 2.5A SuperMESH 3
Datenblatt
914Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 525 V 2.5 A 2.6 Ohms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3
Datenblatt
74Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 620 V 4.2 A 1.6 Ohms - 30 V, 30 V 3 V 26 nC - 55 C + 150 C 70 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 1.50 Ohm typ 4 A MDmesh K5 Power MOSFET in an IPAK package
Datenblatt
78Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 4 A 1.75 Ohms - 30 V, 30 V 3 V 5 nC - 55 C + 150 C 60 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an IPAK package
Datenblatt
389Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 900 V 6 A 910 mOhms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-CH 250V 0.29Ohm 8A STripFET II
Datenblatt
252Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 250 V 8 A 290 mOhms - 20 V, 20 V 4 V 16 nC - 55 C + 175 C 72 W Enhancement STripFET Tube
STMicroelectronics MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
Datenblatt
127Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 5.5 A 780 mOhms - 25 V, 25 V 3 V 10 nC - 55 C + 150 C 60 W Enhancement MDmesh Tube


STMicroelectronics MOSFETs N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 pack
Datenblatt
124Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 18 A 188 mOhms - 25 V, 25 V 3.25 V 29 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V, 78 mOhm typ 34 A MDmesh M2 Power MOSFET
Datenblatt
14Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 34 A 88 mOhms - 25 V, 25 V 3 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package
Datenblatt
101Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube


STMicroelectronics MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO247-4 package
Datenblatt
25Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 4.75 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long lead
Datenblatt
83Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 70 mOhms - 25 V, 25 V 2 V 70 nC - 55 C + 150 C 300 W Enhancement MDmesh
STMicroelectronics MOSFETs N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET
Datenblatt
16Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 39 A 69 mOhms - 25 V, 25 V 3.25 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics STO60N030M9
STMicroelectronics MOSFETs N-channel 600 V, 23 mOhm typ., 79 A MDmesh M9 Power MOSFET in a TO-LL package
Datenblatt
1 800Auf Bestellung
Min.: 1
Mult.: 1
: 1 800

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STMicroelectronics STO60N045DM9
STMicroelectronics MOSFETs N-channel 600 V, 39 mOhm typ., 55 A, MDmesh DM9 Power MOSFET in a TO-LL package
Datenblatt
1 800Auf Bestellung
Min.: 1
Mult.: 1
: 1 800

Reel, Cut Tape