STMicroelectronics Galvanisch isolierte Gate-Treiber

Ergebnisse: 46
Auswählen Bild Teile-Nr. Herst. Beschreibung Datenblatt Verfügbarkeit Preis (EUR) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern. Menge RoHS ECAD Model Serie Montageart Verpackung/Gehäuse Anzahl der Kanäle Isolierungsspannung Minimale Betriebstemperatur Maximale Betriebstemperatur Pd - Verlustleistung Verzögerungszeit - Max. Anstiegszeit Abfallzeit Qualifikation Verpackung
STMicroelectronics Galvanically Isolated Gate Drivers SO 16 .30 LARGE JEDEC MS-013

STGAP SMD/SMT SO-16 1 Channel 5.7 kV rms - 40 C + 125 C 95 ns 24 ns 16 ns Reel, Cut Tape
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated gate driver SiC 10A Source/Sink desat protect SOFTOFF

SMD/SMT SO-16 1 Channel 5.7 kV - 40 C + 125 C 95 ns 20 ns 18 ns Tube
STMicroelectronics Galvanically Isolated Gate Drivers Automotive advanced isolated gate driver for IGBTs and SiC MOSFETs

SMD/SMT SO-36W 2 Channel 5330 Vrms - 40 C + 125 C 100 ns 15 ns 45 ns AEC-Q100 Reel, Cut Tape, MouseReel
STMicroelectronics Galvanisch isolierte Gate-Treiber Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs Nicht-auf-Lager-Vorlaufzeit 25 Wochen
Min.: 800
Mult.: 800

5 kV Tube
STMicroelectronics Galvanisch isolierte Gate-Treiber Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs Nicht-auf-Lager-Vorlaufzeit 25 Wochen
Min.: 2 000
Mult.: 2 000

Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated 4 A dual gate driver

5 kV Tube
STMicroelectronics Galvanisch isolierte Gate-Treiber Galvanically isolated 4 A single gate driver Nicht-auf-Lager-Vorlaufzeit 25 Wochen
Min.: 2 000
Mult.: 2 000

STGAP2S Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated 4 A dual gate driver

5 kV Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs

5 kV AEC-Q100 Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs

Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs

Tube
STMicroelectronics Galvanisch isolierte Gate-Treiber Galvanically isolated 4 A single gate driver Nicht-auf-Lager-Vorlaufzeit 25 Wochen
Min.: 1
Mult.: 1

STGAP2S Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated gate driver IGBTs 6A Source/Sink desat protect SOFTOFF

SMD/SMT SO-16 1 Channel 5.7 kV - 40 C + 125 C 95 ns 20 ns 18 ns Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated gate driver SiC 6A Source/Sink desat protect SOFTOFF

SMD/SMT SO-16 1 Channel 5.7 kV - 40 C + 125 C 95 ns 20 ns 18 ns Tube
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated gate driver IGBTs 10A Source/Sink desat protect SOFTOFF

SMD/SMT SO-16 1 Channel 5.7 kV - 40 C + 125 C 95 ns 20 ns 18 ns Tube
STMicroelectronics Galvanically Isolated Gate Drivers Automotive advanced isolated gate driver for IGBTs and SiC MOSFETs

AEC-Q100 Tube
STMicroelectronics Galvanisch isolierte Gate-Treiber Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT Nicht-auf-Lager-Vorlaufzeit 15 Wochen
Min.: 1 000
Mult.: 1 000

Through Hole TO-220-3 Tube
STMicroelectronics Galvanisch isolierte Gate-Treiber Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT Nicht-auf-Lager-Vorlaufzeit 15 Wochen
Min.: 1 000
Mult.: 1 000

Through Hole TO-220-3 Tube
STMicroelectronics STGAP2HSCM
STMicroelectronics Galvanisch isolierte Gate-Treiber Galvanically isolated 4 A single gate driver Nicht-auf-Lager-Vorlaufzeit 25 Wochen
Min.: 800
Mult.: 800

STMicroelectronics STGAP2HSM
STMicroelectronics Galvanisch isolierte Gate-Treiber Galvanically isolated 4 A single gate driver Nicht-auf-Lager-Vorlaufzeit 25 Wochen
Min.: 800
Mult.: 800

STMicroelectronics STGAP2SICSANC
STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs

AEC-Q100 Tube