Navitas Semiconductor Featured Products

Designed to block voltage in both directions using unique substrate clamp technology.

Switches are designed to block voltage in both directions, with unique substrate-clamp technology.

Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.

Fully integrated GaN ICs with bidirectional lossless current sensing and high efficiency.

These devices are optimized for higher power systems using GaNSafe technology.

These devices create a faster, smaller, more efficient, and more robust integrated powertrain.

Enthalten Steuer-, Antriebs-, Erkennungs- und Schutzfunktionen für Ladegeräte/Adapter-Apps mit hoher Dichte.

Verfügen über einen integrierten GATE-Treiber, einen weiten V_CC -Bereich, PWM-Eingänge und einen internen 2kV ESD-Schutz.

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