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Alliance Memory AS6C8008B & AS6C8016B Super Low Power CMOS SRAM

Alliance Memory AS6C8008B & AS6C8016B Super Low Power CMOS SRAM is a low-power CMOS static random access memory. The devices are organized as 524,288 words by 8- or 16-bits. The memory is fabricated using very high-performance, high-reliability CMOS technology. Its standby current is stable within the range of operating temperature.

Features

  • Fast access time 45/55ns
  • Low power consumption
  • Standby current: 2.5µA (Typ.)
  • Single 2.7V ~ 3.6V power supply
  • All inputs and outputs TTL compatible
  • Fully static operation
  • Tri-state output
  • Data retention voltage 1.5V (Min.)
  • Package 44-pin 400mil TSOP II

Block Diagram

Block Diagram - Alliance Memory AS6C8008B & AS6C8016B Super Low Power CMOS SRAM
Veröffentlichungsdatum: 2022-06-08 | Aktualisiert: 2022-06-16